Vertical and Compact ESICL-to-ESIW Transition for Multilayer Empty Substrate Integrated Circuits
- 14 November 2024
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Technology Letters
- Vol. 35 (1) , 63-66
Abstract
In this letter, a vertical transition from empty substrate integrated (ESI) coaxial line (ESICL) to ESI waveguide (ESIW) is presented. In contrast to in-line approaches, the proposed transition can connect both technologies with an independent substrate height, thus providing a compact structure. To transform the $\text{TEM}$ mode into the $\text{TE}_{10}$ mode, an aperture transversal to the propagation direction is used to couple the fields, and matching elements are added to improve the return loss level. A design guideline is presented and used to design two transitions. A back-to-back prototype is fabricated and measured to validate the proposed transition. The measured results show a return loss level better than 11.2 dB and an insertion loss lower than 1 dB, which makes the proposed transition promising for high-performance interconnection required in multilayer systems.Keywords
Funding Information
- MICIU/AEI/10 (0000DONOTUSETHIS0000.13039/501100011033)
- Spanish Government (Project PID2022-136590OB)
- Project C41, and Project C44
- European Union Next Generation EU/PRTR (TED2021-129196B)
- European Social Fund +
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