Deep level transient spectroscopy characterisation of Xe irradiated GaN
- 1 October 2017
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 409, 69-71
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gatePhysica Status Solidi (a), 2016
- Thermally stable device isolation by inert gas heavy ion implantation in AlGaN/GaN HEMTs on SiJournal of Vacuum Science & Technology B, 2016
- Investigation of structural and photoluminescence properties of gas and metal ions doped zinc oxide single crystalsJournal of Alloys and Compounds, 2014
- Introduction and annealing of primary defects in proton‐bombarded n‐GaNPhysica Status Solidi (b), 2013
- Molecular dynamics study of damage accumulation in GaN during ion beam irradiationPhysical Review B, 2003
- Electrical and optical isolation of GaN by high energy ion irradiationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2003
- Radiation hardness of gallium nitrideIEEE Transactions on Nuclear Science, 2002
- The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaNNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2001
- Electron-irradiation-induced deep level in n-type GaNApplied Physics Letters, 1998
- Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaNApplied Physics Letters, 1996