High-power diode-pumped actively Q-switched Nd:YVO_4 self-Raman laser: influence of dopant concentration

Efficient self-Raman frequency conversion from a diode-pumped actively $Q$-switched $\mathrm{Nd}:{\mathrm{YVO}}_4$ laser at 1064 nm to Stokes emission at 1176 nm is achieved for the first time to the author’s knowledge. With a 0.2-at. % $\mathrm{Nd}:{\mathrm{YVO}}_4$ crystal, greater than 1.5 W of power at a wavelength of 1176 nm at a repetition rate of 20 kHz was generated with a diode pump power of 10.8 W, corresponding to a conversion of 13.9%. Pulse width and peak power were 18 ns and 4.2 kW, respectively.