Hot carrier energy loss rates in GaInAs/InP quantum wells
Authors:
- D.J. WestlandDWD.J. Westland
- J.F. RyanJRJ.F. Ryan
- M.D. ScottMSM.D. Scott
- J.I. DaviesJDJ.I. Davies
- J.R. RiffatJRJ.R. Riffat
- 30 April 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (3-4) , 431-434
Abstract
No abstract availableKeywords
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