Definition of dielectric breakdown for ultra thin (<2 nm) gate oxides
Authors:
- M DepasMDM Depas
- T NigamTNT Nigam
- M.M HeynsMHM.M Heyns
- 1 May 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (5) , 725-728
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structuresSolid-State Electronics, 1995
- Quantitative Analysis of Tunneling Current through Ultrathin Gate OxidesJapanese Journal of Applied Physics, 1995
- Electrical instability of ultrathin thermal oxides on siliconMicroelectronic Engineering, 1995
- Time-dependent positive charge generation in very thin silicon oxide dielectricsApplied Physics Letters, 1992
- Current fluctuations and silicon oxide wear-out in metal-oxide-semiconductor tunnel diodesApplied Physics Letters, 1988
- Low-frequency noise in silicon-gate metal-oxide-silicon capacitors before oxide breakdownApplied Physics Letters, 1987