Design of a radiation tolerant CMOS image sensor
Authors:
- 1 December 2011
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 412-415
Abstract
This paper presents the design of a radiation tolerant CMOS image sensor for space applications. The pixel is based on a commercially available 4T pinned photodiode architecture and is designed using a number of radiation-tolerant physical layout techniques. In addition, a simple yet robust programmable column biasing current is proposed to deal with the dramatic temperature fluctuations. A prototype chip consisting 256×256 pixel array has been implemented using TSMC 0.18 CIS process.Keywords
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