Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium
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Abstract
The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.Keywords
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Funding Information
- Narodowym Centrum Nauki (2019/03/X/ST5/01907)
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