Observation of planar Hall effect in the topological insulator NaCd4As3

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Abstract
The observation of the planar Hall effect (PHE) illuminates the spin textures and topological properties of materials, indicating potential applications in quantum computing and electronic devices. Here, we present a study on the planar Hall transport of topological insulator NaCd4As3 single crystals. When the magnetic field is rotated within the sample plane relative to the current direction, we observe remarkable planar Hall resistivity and giant planar anisotropic magnetoresistance (AMR), both consistent with the theoretical expression of the PHE. Further analysis reveals that the orbital magnetoresistance effect, unrelated to surface electrons from topological surface states or bulk electrons from nontrivial Berry phases, lays a dominant role in the PHE in NaCd4As3. Additionally, the AMR ratio reaches −43% at 3 K under 14 T and remains −9% at room temperature, markedly exceeding that of traditional ferromagnetic metals. These findings provide a platform for understanding the PHE mechanism in topological insulators and highlight the potential of NaCd4As3 for angle and magnetic field detection applications.
Funding Information
  • National Science Fund for Distinguished Young Scholars (52225312)
  • National Key Research and Development Program of China (2022YFA1602603, 2023YFA1406102)
  • National Natural Science Foundation of China (12374049, 12174395, 12204004, 12004004)

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