Corrigendum to “Ultrathin monolithic HfO2 formed by Hf-seeded atomic layer deposition on MoS2: Film characteristics and its transistor application” [Thin Solid Films 673 (2019) 112-118]

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Publisher website

1 March 2021

journal article
correction
Published by Elsevier in Thin Solid Films

Vol. 721, 138544
DOI:10.1016/j.tsf.2021.138544

Abstract

No abstract available

Keywords

DEPOSITION