MBE Growth Method for Pyramid-Shaped GaAs Micro Crystals on ZnSe(001) Surface Using Ga Droplets
Authors:
- Toyohiro ChikyowTCToyohiro Chikyow
- Nobuyuki KoguchiNKNobuyuki Koguchi
- 1 November 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (11A) , L2093-2095
Abstract
Micro crystals of GaAs which were pyramid-shaped and 35 nm in bottom length were grown epitaxially on a ZnSe(001) surface by using As-incorporated growth into Ga droplets for the first time. These micro crystals consisted of (111) facets. The size distribution was controlled within 16% in deviation. The As-incorporated lateral growth of GaAs was not observed. A newly proposed method was thought to be useful in fabricating quantum well boxes.Keywords
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