Mechanisms of Current Formation in nBn Structures Based on HgCdTe with a Superlattice in the Barrier Region

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Abstract
Over a wide temperature range, a study was carried out of the mechanisms of formation of dark current and photocurrent in an nBn structure based on n-HgCdTe, grown by molecular beam epitaxy, with a superlattice in the barrier region. The influence of different levels of constant illumination on the electrical characteristics of structures was studied. The behavior of the bulk current component JB and the surface leakage current component JS was analyzed at various bias voltages and temperatures. The study showed a strong dependence of dark current density on temperature. A significant effect of constant illumination with an IR LED on the current density value has been demonstrated. The dominance of current components JB over JS is shown throughout the entire range of bias voltages and temperatures studied.

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