A new model for the description of gate voltage and temperature dependence of gate induced drain leakage (GIDL) in the low electric field region [DRAMs]
Authors:
- M. RosarMRM. Rosar
- B. LeroyBLB. Leroy
- G. SchweegerGSG. Schweeger
- 1 January 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (1) , 154-159
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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