Effect of sputtering power on the structural and optical properties of RF magnetron sputtered ITO films
Authors:
- 1 June 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (6) , 1242-1249
Abstract
No abstract availableKeywords
This publication has 34 references indexed in Scilit:
- Effect of annealing on electrical and optical properties of RF magnetron sputtered indium tin oxide filmsApplied Surface Science, 1993
- Bright organic electroluminescent devices with double-layer cathodeIEEE Transactions on Electron Devices, 1993
- R.f. magnetron-sputtered indium tin oxide film on a reactively ion-etched acrylic substrateThin Solid Films, 1993
- Properties of indium tin oxide films prepared by the electron beam evaporation method in relation to characteristics of indium tin oxide/silicon oxide/silicon junction solar cellsJournal of Applied Physics, 1992
- Properties of Photosensor with Amorphous Si:H/SiOx:H Double-Layer StructureJapanese Journal of Applied Physics, 1992
- Microstructure and etching properties of sputtered indium—tin oxide (ITO)Physica Status Solidi (a), 1991
- High Conducting Large Area Indium Tin Oxide Electrodes for Displays Prepared by DC Magnetron SputteringJapanese Journal of Applied Physics, 1991
- Transparent heat-reflecting coatings based on highly doped semiconductorsThin Solid Films, 1981
- Spray-deposited ITO—Silicon SIS heterojunction solar cellsIEEE Transactions on Electron Devices, 1980
- Properties of Sn‐Doped In2 O 3 Films Prepared by RF SputteringJournal of the Electrochemical Society, 1975