Variation of photoluminescence spectral line shape of monolayer WS2
Authors:
- Yongjae KwonYKYongjae Kwon
- Kangwon KimKKKangwon Kim
- Wontaek KimWKWontaek Kim
- Sunmin RyuSRSunmin Ryu
- Hyeonsik CheongHCHyeonsik Cheong
- 1 August 2018
- journal article
- research article
- Published by Elsevier in Current Applied Physics
- Vol. 18 (8) , 941-945
Abstract
No abstract availableKeywords
All Related Versions
Funding Information
- National Research Foundation of Korea
- Ministry of Science and ICT, South Korea (NRF-2016R1A2B3008363, 2017R1A5A1014862)
- vdWMRC center (2011-0031630)
This publication has 39 references indexed in Scilit:
- Identification of individual and few layers of WS2 using Raman SpectroscopyScientific Reports, 2013
- Tightly bound trions in monolayer MoS2Nature Materials, 2012
- Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenidesPhysical Review B, 2012
- Equilibrium at the edge and atomistic mechanisms of graphene growthProceedings of the National Academy of Sciences, 2012
- MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy GapNano Letters, 2012
- Symmetry-dependent phonon renormalization in monolayer MoStransistorPhysical Review B, 2012
- Single-layer MoS2 transistorsNature Nanotechnology, 2011
- Atomically Thin: A New Direct-Gap SemiconductorPhysical Review Letters, 2010
- Electronic band structure of single-crystal and single-layerInfluence of interlayer van der Waals interactionsPhysical Review B, 2001
- Bound States in Optical Absorption of Semiconductor Quantum Wells Containing a Two-Dimensional Electron GasPhysical Review Letters, 2000