Preparation and characterization of nickel sulphide thin films using successive ionic layer adsorption and reaction (SILAR) method
Authors:
- S.D SartaleSSS.D Sartale
- C.D LokhandeCLC.D Lokhande
- 1 August 2001
- journal article
- research article
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 72 (1) , 101-104
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Chemical deposition method for metal chalcogenide thin filmsMaterials Chemistry and Physics, 2000
- Growth of copper sulphide thin films by successive ionic layer adsorption and reaction (SILAR) methodMaterials Chemistry and Physics, 2000
- Preparation and characterization of Bi2Se3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) methodMaterials Chemistry and Physics, 2000
- A new chemical method for the preparation of Ag2S thin filmsMaterials Chemistry and Physics, 2000
- ZnS , CdS , and Zn1 − x Cd x S Thin Films Deposited by the Successive Ionic Layer Adsorption and Reaction ProcessJournal of the Electrochemical Society, 1990
- A light-variation insensitive high efficiency solar cellNature, 1987
- Deposition of nickel chalcogenide thin films by solution growth techniquesJournal of Solid State Chemistry, 1986
- Solution deposition of thin solid compound films by a successive ionic-layer adsorption and reaction processApplications of Surface Science, 1985