Growth of high quality GaN on a novel designed bonding-thinned template by HVPE

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Abstract
In this paper, GaN films were grown on a novel designed template via hydride vapour phase epitaxy (HVPE). The template was fabricated by bonding a thinned MOCVD-GaN/sapphire template to a Si wafer (BTMG). Both the lattice deformation and thermal mismatch stress in the film can be decreased. The GaN film grown on the BTMG template displayed a smaller full width at half maximum (FWHM) for the (002) and (102) reflections than the film grown on the MOCVD-GaN/sapphire template (MG), characterized by high-resolution X-ray diffraction (HRXRD). The Raman measurements showed that the residual stress of the HVPE GaN film grown on the BTMG template was greatly released. The better optical quality of the GaN film grown on the BTMG template was detected in comparison to the film grown on the MG template by photoluminescence (PL) spectra. These results indicated that high quality GaN films can be obtained by using the new template.

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