A Novel Short-Circuit Detecting Scheme Using Turn-On Switching Characteristic of IGBT
Authors:
- Byoung-Gun ParkBPByoung-Gun Park
- Jun-Bae LeeJLJun-Bae Lee
- Dong-Seok HyunDHDong-Seok Hyun
- 1 October 2008
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01972618,p. 1-5
Abstract
This paper represents a novel short-circuit detecting scheme using turn-on switching characteristic of IGBT. The proposed scheme has a simple protection circuit, fast fault detection time, and low-cost devices to protect IGBT under short-circuit faults such as fault under load (FUL) and hard switching fault (HSF). The proposed short-circuit detecting scheme using turn-on switching characteristic of IGBT can be integrated as a gate drive integrated circuit (IC) or high voltage integrated circuit (HVIC) because the proposed protection circuit supplements logic and low-voltage component. The feasibility of the proposed short-circuit detecting scheme is verified by simulation results.Keywords
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