ILLIADS: a fast timing and reliability simulator for digital MOS circuits
Authors:
- Y.-H. ShihYSY.-H. Shih
- Y. LeblebiciYLY. Leblebici
- S.-M. KangSKS.-M. Kang
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 12 (9) , 1387-1402
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Analytic transient solution of general MOS circuit primitivesIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1992
- Modeling of nMOS transistors for simulation of hot-carrier-induced device and circuit degradationIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1992
- Analytic macromodeling and simulation of tightly-coupled mixed analog-digital circuits1992
- Simulation techniques for mixed analog/digital circuitsIEEE Journal of Solid-State Circuits, 1990
- Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2or=V/sub d/) during hot-carrier stressing of n-MOS transistorsIEEE Transactions on Electron Devices, 1990
- An accurate and efficient delay time modeling for MOS logic circuits using polynomial approximationIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1989
- Hot-electron-induced MOSFET degradation—Model, monitor, and improvementIEEE Transactions on Electron Devices, 1985
- Delay-Time Modeling for ED MOS Logic LSIIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1983
- MOTIS-An MOS timing simulatorIEEE Transactions on Circuits and Systems, 1975
- Modeling and simulation of insulated-gate field-effect transistor switching circuitsIEEE Journal of Solid-State Circuits, 1968