Unprecedented Uniform 3D Growth Integration of 10-Layer Stacked Si Nanowires on Tightly Confined Sidewall Grooves
Authors:
- 24 September 2020
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 20 (10) , 7489-7497
Abstract
Bottom-up catalytic growth offers a high yield, versatile and powerful tool for the construction of versatile 3D nano-complexes, while the major challenge is to achieve a precise location and uniformity control as guaranteed by top-down lithography. Here, an unprecedented uniform and reliable growth integration of 10-layer stacked Si nanowires (SiNWs) has been accomplished, for the very first time, via a new groove-confined and tailored catalyst formation and guided growth upon the truncated sidewall of SiO2/SiNx multilayers. The SiNW array accomplish a narrow diameter of D_nw=28±2.4 nm, NW-to-NW spacing of t_sp=40 nm and extremely stable growth over L_nw>50 μm and bending locations, which can compete with or even outperform the state-of-the-art top-down lithography and etching approaches, in terms of stacking number, channel uniformity at different levels, fabrication cost and efficiency. These results provide a solid basis to establish a new 3D integration approach to batch-manufacture various advanced electronic and sensor applications.Keywords
Funding Information
- Ministry of Science and Technology of the People's Republic of China (2018YFA0209104, 2018YFB2200101)
- National Natural Science Foundation of China (11874198, 61674075, 61921005, 61974064)
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