Reflection high-energy electron diffraction intensity oscillations during growth of GaN(0001)A by plasma-assisted molecular beam epitaxy
Authors:
- S.M. SeutterSSS.M. Seutter
- M.H. XieMXM.H. Xie
- W.K. ZhuWZW.K. Zhu
- L.X. ZhengLZL.X. Zheng
- H.S. WuHWH.S. Wu
- S.Y. TongSTS.Y. Tong
- 1 January 2000
- journal article
- research article
- Published by Elsevier in Surface Science
- Vol. 445 (2-3) , L71-L75
Abstract
No abstract availableKeywords
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