An AlN/Al0.85Ga0.15N high electron mobility transistor
Top Cited Papers
- 18 July 2016
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 109 (3) , 033509
Abstract
An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al0.85Ga0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high Ion/Ioff current ratio greater than 107 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. The room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.Keywords
Funding Information
- DOE's National Nuclear Security Agency (DE-AC04-94AL85000)
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