Formation and analysis of the specific features of the electronic structure of an array of Ge/ZnSe nanoscale heterostructures
- 1 November 2016
- journal article
- research article
- Published by IOP Publishing in Materials Research Express
- Vol. 3 (11) , 115004
Abstract
This paper describes a method for forming an array of Ge/ZnSe nanoheterostructures by vacuum thermal evaporation. ZnSe and Ge layers were deposited on an anodic aluminum oxide surface with a pore diameter of 24 nm. Scanning electron microscopy showed that nanoheterostructures are formed in the pore channels. The features of the electron structure of the samples obtained were investigated by x-ray photoelectron spectroscopy and optic absorption spectroscopy. These investigations showed that the band gap of germanium increases. Also, there is a significant increase in valence band discontinuity (to 3.6 eV). Thus, we obtained Ge/ZnSe heterostructures with non-overlapping band gaps or broken-gap heterostructures.Keywords
Funding Information
- Russian Foundation for Basic Research (14-32-50276)
This publication has 19 references indexed in Scilit:
- Low-temperature diffused p–n junction with nano/microrelief interface for solar cell applicationsSolar Energy Materials and Solar Cells, 2015
- Formation of ordered array of core/shell ZnS/Ge/ZnS nanostructures by thermal evaporation methodphysica status solidi (c), 2014
- Progress in Nano-Engineered Anodic Aluminum Oxide Membrane DevelopmentMaterials, 2011
- The role of the surfaces in the photon absorption in Ge nanoclusters embedded in silicaDiscover Nano, 2011
- Synthesis and vibrating properties ZnSe/Ge bi-axial heterostructural nanowiresChemical Physics Letters, 2011
- Interface formation of Ge/ZnSe(100) and Ge/ZnS(111) heterojunctions studied by synchrotron radiation photoemissionActa Physica Sinica (Overseas Edition), 1996
- Theoretical calculation for a ZnSe-Ge(110) heterojunction with an ultrathin intralayerPhysical Review B, 1987
- ZnSeGe heterojunction interface states in the energy region of the valence band discontinuitySolid State Communications, 1984
- High-Resolution X-Ray Photoemission Spectrum of the Valence Bands of GoldPhysical Review B, 1972
- Heterojunction solar cell calculationsSolid-State Electronics, 1970