Abstract
MnNiSi crystallizes in the orthorhombic Co2P type structure with a Curie temperature of 616 K and saturation magnetic moment of 2.51 μB. Ge was substituted for silicon to increase the Mn‐Mn distance, the magnetic moment, and Curie temperatures. It was possible to obtain single phase materials of MnNiSi1−xGex up to x = 0.8 . As x is increased the magnetic moment increases from 2.51 μB to a maximum of 2.90 but the Curie temperature decreases continuously as x increases. Magnetization versus field measurements at 4.2 K and room temperature show a normal ferromagnetic behavior for all the compounds investigated except for MnNiSi.2Ge.8 . This compound has a metamagnetic behavior at room temperature and magnetization versus temperature at 6 kOe indicates a sharp peak in the magnetization at 370 K. This anomalous behavior is absent in MnNiSi.3Ge.7 .