Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Crown-Shaped Patterned Sapphire Substrates
- 20 April 2012
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 24 (14) , 1212-1214
Abstract
In this letter, we report the high performance GaN-based light-emitting diodes (LEDs) with embedded air void array grown by metal-organic chemical vapor deposition. The donut-shaped air void was formed at the interface between crown-shaped patterned sapphire substrates (CPSS) and the GaN epilayer by conventional photolithography. The transmission electron microscopy images demonstrate that the threading dislocations were significantly suppressed by epitaxial lateral overgrowth (ELOG). The Monte Carlo ray-tracing simulation reveals that the light extraction of the air-voids embedded LED was dramatically increased due to a strong light reflection and redirection by the air voids.Keywords
This publication has 5 references indexed in Scilit:
- Enhanced Light Output Power of InGaN/GaN Light Emitting Diodes with Embedded Air PrismsElectrochemical and Solid-State Letters, 2010
- Defect reduction of laterally regrown GaN on GaN/patterned sapphire substratesJournal of Crystal Growth, 2009
- Study of the Excitation Power Dependent Internal Quantum Efficiency in InGaN/GaN LEDs Grown on Patterned Sapphire SubstrateIEEE Journal of Selected Topics in Quantum Electronics, 2009
- Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet ChipJapanese Journal of Applied Physics, 2002
- Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor depositionApplied Physics Letters, 1997