Evaluation and applications of 600V/650V enhancement-mode GaN devices
Authors:
- Xiucheng HuangXHXiucheng Huang
- Tao LiuTLTao Liu
- Bin LiBLBin Li
- Fred C. LeeFLFred C. Lee
- Qiang LiQLQiang Li
- 1 November 2015
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- A New Package of High-Voltage Cascode Gallium Nitride Device for Megahertz OperationIEEE Transactions on Power Electronics, 2015
- Avoiding Si MOSFET Avalanche and Achieving Zero-Voltage Switching for Cascode GaN DevicesIEEE Transactions on Power Electronics, 2015
- LLC Resonant Converter With Matrix TransformerIEEE Transactions on Power Electronics, 2014
- GaN Transistors for Efficient Power Conversion2014
- Evaluation and Application of 600 V GaN HEMT in Cascode StructureIEEE Transactions on Power Electronics, 2014
- Analytical Loss Model of High Voltage GaN HEMT in Cascode ConfigurationIEEE Transactions on Power Electronics, 2014
- Package Parasitic Inductance Extraction and Simulation Model Development for the High-Voltage Cascode GaN HEMTIEEE Transactions on Power Electronics, 2014
- Gate drive design considerations for high voltage cascode GaN HEMT2014
- Transformer shielding technique for common mode noise reduction in isolated converters2013