Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors
Authors:
- D. GreenbergDGD. Greenberg
- B. JagannathanBJB. Jagannathan
- G. FreemanGFG. Freeman
- S. SubbannaSSS. Subbanna
- 13 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 110-113
Abstract
Thermal resistance has been measured for high speed SiGe HBTs with various emitter widths and lengths. The smaller devices exhibited higher thermal resistance values, but eventually resulted in lower junction temperature rise for a given power density. A physical model has been developed which showed good agreement with the measurements. The model indicates that the thermal resistance depends strongly on the deep trench geometry. The thermal resistance is also anticipated to increase with the existence of adjacent devices due to a heat dissipation interference, according to the model.Keywords
This publication has 6 references indexed in Scilit:
- Prediction of thermal resistance in trench isolated bipolar device structures2002
- CW measurement of HBT thermal resistanceIEEE Transactions on Electron Devices, 1992
- Electrical measurement of the junction temperature of an RF power transistorIEEE Transactions on Instrumentation and Measurement, 1992
- Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurementIEEE Transactions on Electron Devices, 1992
- Thermal resistance measurements for AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1991
- Thermal characterization of power transistorsIEEE Transactions on Electron Devices, 1976