SiC-bulk growth by physical-vapor transport and its global modelling
Authors:
- D. HofmannDHD. Hofmann
- R. EcksteinRER. Eckstein
- M. KölblMKM. Kölbl
- Y. MakarovYMY. Makarov
- St.G. MüllerSMSt.G. Müller
- E. SchmittESE. Schmitt
- A. WinnackerAWA. Winnacker
- R. RuppRRR. Rupp
- R. SteinRSR. Stein
- J. VölklJVJ. Völkl
- 1 April 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 174 (1-4) , 669-674
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- First results on silicon carbide vapour phase epitaxy growth in a new type of vertical low pressure chemical vapour deposition reactorJournal of Crystal Growth, 1995
- Single crystal growth of SiC substrate material for blue light emitting diodesIEEE Transactions on Electron Devices, 1983
- Investigation of growth processes of ingots of silicon carbide single crystalsJournal of Crystal Growth, 1978