OMVPE growth of GaAs1-xSbx: solid composition
Authors:
- G.B. StringfellowGSG.B. Stringfellow
- M.J. CherngMCM.J. Cherng
- 1 November 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 64 (2) , 413-415
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Thermodynamic aspects of organometallic vapor phase epitaxyJournal of Crystal Growth, 1983
- AlxGa1−xAsySb1−y phase diagramJournal of Crystal Growth, 1983
- The organometallic vpe growth of GaSb and GaAsl−xSbx using trimethylantimonyJournal of Electronic Materials, 1982
- Miscibility gap in the GaAsy Sb1−y systemJournal of Electronic Materials, 1979
- GaAs1-xSbx(0.3<x<0.9) Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1977
- The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystalsJournal of Applied Physics, 1972