Analysis of nonideal Schottky and p-n junction diodes—Extraction of parameters from I–V plots
Authors:
- 1 November 1995
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (9) , 5481-5489
Abstract
We propose two novel methods of determining nonideal Schottky and p‐n junction diodes parameters from I–V plots. The series resistance Rs, saturation current Is, as well as the bias‐dependent ideality factor n(V), can be obtained from two successive I–V measurements—one solely of the diode and the other with an external resistance added in series with the measured diode. Our analysis confirms that the methods produce accurate and reliable results even when the conventional techniques fail, such as when we have strongly varying function n(V) in the presence of series resistance and an experimental noise.Keywords
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