Hole Spin Resilient to Dipole-Induced Thermal Effects

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Abstract
Recent advances in scaling up spin-based quantum processors have revealed unanticipated issues related to thermal effects. Microwave pulses required to manipulate and read the qubits are found to overheat the spins environment, which unexpectedly induces Larmor frequency shifts, reducing thereby gate fidelities. In this study, we shine light on these elusive thermal effects, by experimentally characterizing the temperature dependence of the Larmor frequency for a single hole spin in silicon. Our results unambiguously reveal an electrical origin underlying the thermal susceptibility, stemming from the spin-orbit-induced electric susceptibility. We perform an accurate modeling of the spin electrostatic environment and gyromagnetic properties, allowing us to pinpoint electric dipoles which unfreeze as the temperature increases, as responsible for these frequency shifts. Surprisingly, we find that the thermal susceptibility can be tuned with the magnetic field angle and can even cancel out, unveiling a sweet-spot where the hole spin is rendered immune to thermal effects. These findings reveal the microscopic origin of longitudinal thermal susceptibility, providing key insight for the design of thermally robust semiconductor qubits.
Funding Information
  • European Union’s Horizon 2020 Research and Innovation Programme (951852)
  • European Union’s Horizon 2020 Research and Innovation Programme (101174557)
  • European Union’s Horizon 2020 Research and Innovation Programme (810504)
  • French National Research Agency (ANR-22-PETQ-0003)
  • Program QuantForm-UGA (ANR-21-CMAQ-0003)
  • Labex LANEF (ANR-10-LABX-51-01)

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