Abstract
The development of a high-performance acetone gas sensor for detecting low concentrations of acetone gas is still a key issue. Here, we propose a green-solution-processed electrospinning technique to construct Nd-doped aligned In2O3 nanofiber field-effect transistors. Benefitting from electron transport, the aligned InNdO nanofiber field-effect transistor (FET) exhibits a high mobility of 5.5 cm2 V−1 s−1 and an on/off current ratio of 107. As a result, when used in acetone gas sensors, the gas sensor showed excellent properties for acetone detection at room temperature (20 °C), including high response (88) under 4 ppm, a fast response and recovery time (31/53 s), a relatively low detection limit (69 ppb) and acceptable selectivity of acetone gas. In addition, capacitance–voltage (C–V) analysis was used to further explore the internal mechanism of acetone sensing. This work offers an efficient and novel strategy to design high-performance acetone gas sensors for ppb-level detection at room temperature (20 °C).
Funding Information
  • National Natural Science Foundation of China (61774100)
  • Shanghai Minhang Science and Technology Commission (18JC1410402, 19JC1412400)
  • National Science Fund for Distinguished Young Scholars (51725505)

This publication has 56 references indexed in Scilit: