Impact of Mg concentration on energy-band-depth profile of Mg-doped InN epilayers analyzed by hard X-ray photoelectron spectroscopy

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Abstract
The electronic structures of Mg-doped InN (Mg-InN) epilayers with the Mg concentration, [Mg], ranging from 1 × 1019 to 5 × 1019 cm−3 were systematically investigated by soft and hard X-ray photoelectron spectroscopies. The angle-resolved results on the core-level and valence band photoelectron spectra as a function of [Mg] revealed that the energy band of Mg-InN showed downward bending due to the n+ surface electron accumulation and p type layers formed in the bulk. With an increase in [Mg], the energy-band changed from monotonic to two-step n+p homojunction structures. The oxygen concentration rapidly increased at the middle-bulk region (∼4.5 to ∼7.5 nm) from the surface, which was one of the reasons of the transformation of two-step energy band.

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