A self-consistent technique for the analysis of the temperature dependence of current–voltage and capacitance–voltage characteristics of a tunnel metal-insulator-semiconductor structure

A new formalism is reported for the analysis of the current–voltage $\mathrm{(I–V)}$ characteristics of a tunnel metal-insulator-semiconductor (MIS) device, which considers a bias dependent distribution of interface states and barrier lowering due to the image force. Our theoretical expression for the $\mathrm{I–V}$ characteristics is general in the sense that it is applicable even under conditions when both the thermionic emission and the diffusion mechanisms of current transport compete with each other. The method is ideal for new epitaxial materials and devices where the carrier density is not known precisely beforehand. A self-consistent method of analysis is reported to determine the characteristic parameters of MIS diodes, using simultaneously the $\mathrm{I–V}$ and capacitance–voltage data as a function of temperature. This computational analysis has been used to examine the current transport mechanism in an $\mathrm{Au}\mathrm{/p-}\mathrm{InP}$ epitaxial MIS diode. The experimental verification of the theory and computational analysis is done by comparing the values of the interface state density distribution in thermal equilibrium with the semiconductor $N_{\mathrm{ss}},$ obtained from the forward $\mathrm{I–V}$ characteristics, with those directly measured by the multifrequency admittance method. Excellent agreement from these comparisons strongly supports the validity of the theory. Over the temperature range of 200–393 K, our results indicate that the interfacial layer-thermionic emission was clearly the dominant mechanism of the forward current transport in an MIS fabricated on a lightly doped InP:Zn epitaxial layer. The transmission coefficient through the insulator layer obtained from the reverse $\mathrm{I–V}$ characteristics was ${\theta }_p{\text{=1.43×10}}^{\text{−3}}\text{±7\%}$ from which we estimate an oxide thickness of 2.2 nm. The analysis of the barrier height ${\phi }_{\text{b0}}$ versus temperature, obtained from 1 MHz $\mathrm{C–V}$ data provided a value ${\phi }_0$ =1.06 V±10% for the zero bias and zero temperature barrier height.