Investigation of the anomalous hump phenomenon in amorphous InGaZnO thin-film transistors

This publication has 15 references indexed in Scilit:

• H₂O Induced Hump Phenomenon in Capacitance–Voltage Measurements of a-IGZO Thin-Film Transistors
  IEEE Transactions on Device and Materials Reliability, 2015
• Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays
  Journal of Materials Research, 2013
• Anomalous Stress-Induced Hump Effects in Amorphous Indium Gallium Zinc Oxide TFTs
  Transactions on Electrical and Electronic Materials, 2012
• Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress
  Applied Physics Letters, 2012
• Positive Gate-Bias Temperature Stability of RF-Sputtered $\hbox{Mg}_{0.05}\hbox{Zn}_{0.95}\hbox{O}$ Active-Layer Thin-Film Transistors
  IEEE Transactions on Electron Devices, 2011
• Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation
  Electrochemical and Solid-State Letters, 2011
• Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer
  Applied Physics Letters, 2010
• Present status of amorphous In–Ga–Zn–O thin-film transistors
  Science and Technology of Advanced Materials, 2010
• Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
  Applied Physics Letters, 2008
• Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water
  Applied Physics Letters, 2008