GaN/metal/Si heterostructure fabricated by metal bonding and laser lift-off
Authors:
- Zhang XiaoyingZXZhang Xiaoying
- Ruan YujiaoRYRuan Yujiao
- Chen SongyanCSChen Songyan
- Li ChengLCLi Cheng
- 1 December 2009
- journal article
- Published by IOP Publishing in Journal of Semiconductors
- Vol. 30 (12)
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Influences of laser lift-off process on the performances of large-area light-emitting diodesJournal of Crystal Growth, 2007
- Study of Laser-Debonded GaN LEDsIEEE Transactions on Electron Devices, 2006
- Effect of inductively coupled plasma damage on performance of GaN–InGaN multiquantum-well light-emitting diodesApplied Physics Letters, 2005
- Low-frequency excess noise characterizations of laser-assisted de-bonded GaN filmsApplied Surface Science, 2005
- Fabrication of epitaxial III-nitride cantilevers on silicon (1 1 1) substratesJournal of Materials Science: Materials in Electronics, 2004
- Enhancement of (In,Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to siliconIEEE Photonics Technology Letters, 2002
- Preparation of large area freestanding GaN by laser lift-off technologyMaterials Letters, 2002
- In x Ga 1−x N light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-offApplied Physics Letters, 2000
- Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-offApplied Physics Letters, 1999
- Optical patterning of GaN filmsApplied Physics Letters, 1996