Surface electronic bands of GaAs(1 1 0)-Sb: An angular resolved photoemission study
Authors:
- A. TulkeATA. Tulke
- Monika Mattern-KlossonMMMonika Mattern-Klosson
- H. LüthHLH. Lüth
- 1 August 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 59 (5) , 303-306
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- The schottky-barrier of GaAs(110)-Sb studied by UV photoemissionSolid State Communications, 1985
- Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structurePhysical Review B, 1985
- Sb Overlayers on (110) Surfaces of III-V Semiconductors: Structure and BondingPhysical Review Letters, 1984
- Bonding of antimony on GaAs(110): A prototypical system for adsorption of column-V elements on III-V compoundsPhysical Review B, 1983
- Electron states of an Sb-ordered overlayer on GaAs(110)Physical Review B, 1983
- Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)--Sb(1 ML)Physical Review B, 1982
- LEED-AES-TDS characterization of Sb overlayers on GaAs(110)Surface Science, 1982
- Angle-resolved photoemission from GaAs (110) surface statesPhysics Letters A, 1978