Reduction of surface defects on the GaP window layer of 630 nm AlGaInP LED using post-Zn diffusion process
Authors:
- H.J. LeeHLH.J. Lee
- S.U. KimSKS.U. Kim
- S.J. SoSSS.J. So
- Y.D. ChoYCY.D. Cho
- Y.J. KimYKY.J. Kim
- S.C. AhnSAS.C. Ahn
- C.H. LeeCLC.H. Lee
- 1 August 2013
- journal article
- Published by Elsevier in Current Applied Physics
- Vol. 13 (6) , 1032-1036
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
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