Two-Mode MoS2 Filament Transistor with Extremely Low Subthreshold Swing and Record High On/Off Ratio

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Abstract
With rapid development of integrated circuits, urge requirements for transistor with lower sub-threshold swing (SS) and better contact properties, are needed. To optimize the SS and contact issues, we propose a concept of molybdenum disulfide (MoS2) filament transistor with two-mode. We successfully fabricated the proposed devices in a wafer-scale. Mode I can enable the device with extremely low SS down to 2.26 mV/dec by switching contact filament between on and off while mode II can realize record high on/off ratio 2.6×109 by using filament as quasi-zero dimensional (quasi-0D) contact. Compared to conventional three dimensional (3D) contact, quasi-0D contact using conductive filament improves the current density nearly 50 times. We also built spice model to simulate the electrical behaviors and successfully predict proposed transistor owns extremely low SS in mode I (using abrupt filament formation/rupture) and excellent quasi-0D contact in mode II. The two-mode MoS2 filament transistor can significant improve the SS and contact comparing to those of the state-of-the-art transistors, which has the great potential to boost the development of next generation mainstream transistors.
Funding Information
  • Ministry of Science and Technology of the People's Republic of China (2015CB352101, 2016YFA0200400)
  • China Association for Science and Technology (2018QNRC001)
  • Natural Science Foundation of Beijing Municipality (4184091)
  • Tsinghua University (533306001, 2014Z01006)
  • National Natural Science Foundation of China (61874065, 51861145202, 61434001, 61574083)
  • Shenzhen Municipal Science and Technology Innovation Commission (JCYJ20150831192224146)
  • Beijing Innovation Center for Future Chip, Tsinghua University

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