Caracterization of AIN buffer layers on (0001)-sapphire substrates
Authors:
- 1 December 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 50 (1-3) , 32-37
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- GaN And Related Materials For High Power ApplicationsMRS Proceedings, 1997
- The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layerApplied Physics Letters, 1996
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991
- X-ray and neutron scattering from rough surfacesPhysical Review B, 1988
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- The kinetics of precipitation from supersaturated solid solutionsJournal of Physics and Chemistry of Solids, 1961
- X-ray studies of deformed metalsProgress in Metal Physics, 1959
- Interferenz von Röntgenstrahlen an dünnen SchichtenAnnalen der Physik, 1931