Ultra-high efficiency power conversion using cryogenic MOSFETs and HT-superconductors
Authors:
- O.M. MuellerOMO.M. Mueller
- K.G. HerdKHK.G. Herd
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 772-778
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Cryogenic MOSFET power conversion2003
- A new and accurate circuit-modelling approach for the power-diode2003
- A novel lossless resonant MOSFET driver2003
- Static properties of the superconducting FET: Numerical analysisIEEE Transactions on Electron Devices, 1992
- A cryogenic class-E RF power amplifierAIP Conference Proceedings, 1992
- A model and equivalent circuit for a superconducting flux flow transistorIEEE Transactions on Applied Superconductivity, 1991
- Switching losses of the cryogenic MOSFET and SITCryogenics, 1990
- On-resistance, thermal resistance and reverse recovery time of power MOSFETs at 77 KCryogenics, 1989