Strained donor-bound excitons in Si 28

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Abstract
We present a comprehensive experimental study of the neutral donor to donor-bound exciton transition ( D 0 → D 0 X ) in isotopically enriched Si 28 , focusing on the group V donors P, As, and Sb under finely tuned uniaxial stress along the [100] and [110] crystal axes and magnetic fields from 3.5 mT to 1.7 T. From these measurements, donor-specific deformation potentials are extracted. The uniaxial electron deformation potential Ξ u is found to be significantly larger than values reported for other states or transitions in silicon and shows clear dependence on the donor species, indicating an increased sensitivity of the D 0 X state to strain and central-cell effects. We also observe a magnetic field dependence of the hole shear deformation potential d , suggesting a more complex strain coupling mechanism than captured by standard theory. Diamagnetic shift parameters determined from Zeeman spectra show good agreement with earlier measurements. Our results provide a refined parameter set critical for the design of silicon quantum devices based on D 0 X transitions.
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Funding Information
  • Universität Paderborn
  • Deutsche Forschungsgemeinschaft (390814868)

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