Improved a-B10C2+xHy/Si p-n heterojunction performance after neutron irradiation
Authors:
- 1 January 2018
- journal article
- research article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 36 (1)
Abstract
The impact of neutron irradiation, in the energy range of ∼0.025 eV, on amorphous semiconducting partially dehydrogenated boron carbide (a-B10C2+xHy) on silicon p-n heterojunction diodes was investigated. The heterojunction devices were created by synthesizing a-B10C2+xHy via plasma enhanced chemical vapor deposition on n-type silicon. Unlike many electronic devices, the performance of the a-B10C2+xHy heterojunction diode improved with neutron irradiation, in spite of the large neutron cross section of 10B. There is also increased charge carrier lifetime of more than 200% with modest neutron irradiation of approximately 2.7 × 108 to 1.08 × 109 neutrons/cm2.Keywords
Funding Information
- Office of Research and Economic Deveopment (HDTRA1-14-1-0041)
- U.S. Department of Energy (DE-AC52-06NA25396)
- DOD | United States Navy | Office of Naval Research (FA4600-12-D-9000-0045, FA4600-12-D-9000-0057)
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