The Temperature Variation of the Concentration of Impurity Carriers in Silicon
Author:
- E H PutleyEPE H Putley
- 1 November 1958
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society (1958-1967)
- Vol. 72 (5) , 917-920
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- The Electrical Conductivity and Hall Effect of SiliconProceedings of the Physical Society (1958-1967), 1958
- Infrared spectra of Group III acceptors in siliconJournal of Physics and Chemistry of Solids, 1958
- Determination of the impurity concentrations in a semiconductor from Hall coefficient measurementsBritish Journal of Applied Physics, 1957
- Defects with Several Trapping Levels in SemiconductorsProceedings of the Physical Society. Section B, 1956
- Absorption spectra of impurities in silicon—IIJournal of Physics and Chemistry of Solids, 1956
- Statistics and Galvanomagnetic Effects in Germanium and Silicon with Warped Energy SurfacesPhysical Review B, 1955
- Hall Effect and Density of States in GermaniumPhysical Review B, 1955