High performance GaN-on-Si power switch: Role of substrate bias in device characteristics
Authors:
- 1 June 2011
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 15483770,p. 223-224
Abstract
In this paper, we discuss the static (DC) and dynamic (switching) characteristics of the GaN-on-Si device, focusing on the impact of bias conditions applied on the Si substrate. It was found that state-of-the-art dynamic on-resistance characteristics of the GaN-on-Si switch can be achieved by properly terminating the Si substrate potential.Keywords
This publication has 1 reference indexed in Scilit:
- 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -ResistanceIEEE Electron Device Letters, 2011