SiO2 Tapered Etching Employing Magnetron Discharge of Fluorocarbon Gas
Authors:
- Tokuhisa OhiwaTOTokuhisa Ohiwa
- Keiji HoriokaKHKeiji Horioka
- Tsunetoshi ArikadoTATsunetoshi Arikado
- Haruo OkanoHOHaruo Okano
- 1 February 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (2R)
Abstract
SiO2 tapered etching has been studied with special emphasis on the substrate temperature. A tapered etching profile was formed accompanying a polymer deposition on the side wall, and a high etching rate was obtained by lowering the substrate temperature. The polymer film deposited on the side wall was easily removed together with photoresist by O2 plasma ashing to yield a very smooth side wall in the via hole without any residual films. Experiments on polymer deposition revealed that the polymerization at as low a temperature as -70°C gives a fluorine-rich polymer film with poor durability in a plasma environment, and the etchants for SiO2 are released by ion bombardments at the interface between the polymer and the underlying SiO2 to enhance SiO2 etching.Keywords
This publication has 1 reference indexed in Scilit:
- Pattern profile control of polysilicon plasma etchingJournal of Vacuum Science & Technology B, 1985