Site-controlled and advanced epitaxial Ge/Si quantum dots: fabrication, properties, and applications

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Abstract
In this review, we report on fabrication paths, challenges, and emerging solutions to integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing standard Si technology. Their potential as laser gain material for the use of optical intra- and inter-chip interconnects as well as possibilities to combine a single-photon-source-based quantum cryptographic means with Si technology will be discussed. We propose that the mandatory addressability of the light emitters can be achieved by a combination of organized QD growth assisted by templated self-assembly, and advanced inter-QD defect engineering to boost the optical emissivity of group-IV QDs at room-temperature. Those two main parts, the site-controlled growth and the light emission enhancement in QDs through the introduction of single defects build the main body of the review. This leads us to a roadmap for the necessary further development of this emerging field of CMOS-compatible group-IV QD light emitters for on-chip applications.
Funding Information
  • Linz Institute of Technology (LIT-2016-1-YOU-002)
  • Austrian Science Fund (P29137-N36)

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