Development of high-efficiency and high-power vertical light emitting diodes
Authors:
- Berthold HahnBHBerthold Hahn
- Bastian GallerBGBastian Galler
- Karl EnglKEKarl Engl
- 18 September 2014
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 53 (10)
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum WellsApplied Physics Express, 2013
- Ceramic Phosphors for Light Conversion in LEDsECS Journal of Solid State Science and Technology, 2012
- Impact of buffer growth on crystalline quality of GaN grown on Si(111) substratesPhysica Status Solidi (a), 2012
- White light emitting diodes with super-high luminous efficacyJournal of Physics D: Applied Physics, 2010
- High efficiency GaN-based LEDs and lasers on SiCJournal of Crystal Growth, 2004
- High brightness LEDs for general lighting applications Using the new ThinGaN™-TechnologyPhysica Status Solidi (a), 2004
- Solid-state lighting: failure analysis of white LEDsJournal of Crystal Growth, 2004
- The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layerJournal of Crystal Growth, 1993
- P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting DiodesJapanese Journal of Applied Physics, 1993
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991