High-Power Optically Pumped Semiconductor Laser at 1040 nm
- 1 March 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 22 (9) , 661-663
Abstract
We demonstrate near-diffraction limited (M 2 ¿ 1.5) output up to 23.8 W with optical-to-optical efficiency 27% and slope efficiency 32.4% and 40.7 W of multimode output from an optically pumped semiconductor laser at 1040 nm. Temperature-dependent photoluminescence measurements confirm accurate epitaxial growth according to the design thereby enhancing the effective gain.Keywords
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