Intermixing at InAs/GaAs and GaAs/InAs interfaces
Authors:
- 2 October 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 189-190, 1041-1046
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- First stages of the MBE growth of InAs on (001)GaAsJournal of Crystal Growth, 1987
- Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985
- Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxyApplied Physics Letters, 1985
- Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structuresApplied Physics Letters, 1985
- Silicon molecular beam epitaxy on gallium arsenideApplied Physics Letters, 1985
- Growth of a novel InAs-GaAs strained layer superlattice on InPApplied Physics Letters, 1985
- Morphology of GaAs and AlxGa1−xAs grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1985
- Thermal Stability of a Short Period AlAs/n-GaAs SuperlatticeJapanese Journal of Applied Physics, 1985
- Observation of one-monolayer size fluctuations in a GaAs/GaAlAs superlatticeApplied Physics Letters, 1984
- The electronic structure of Ge:GaAs(110) interfacesJournal of Vacuum Science and Technology, 1982