Disordering of Si-Doped AlAs/GaAs Superlattice by Annealing
Authors:
- Mitsuo KawabeMKMitsuo Kawabe
- Nobuyuki MatsuuraNMNobuyuki Matsuura
- Norisato ShimizuNSNorisato Shimizu
- Fumio HasegawaFHFumio Hasegawa
- Yasuo NannichiYNYasuo Nannichi
- 1 August 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (8A) , L623
Abstract
Effect of Si-doping levels and annealing temperature on disordering of 150-Å AlAs/150-Å GaAs superlattices is studied. The doping level of 4×1018 cm-3 cause disorder for 800°C, 2 h annealing, while the doping level of 1×1018 cm-3 does not induce disorder on this annealing condition. A superlattice which is doped with 1×1019 Si cm-3 disintegrates after 650°C, 2 h annealing and the diffusion coefficient of Al–Ga interdiffusion is estimated to be 3×10-17 cm2s-1. For 800°C, 2 h annealing the two undoped AlAs/GaAs layers adjacent to the doped region are disordered by Si diffusion.Keywords
This publication has 7 references indexed in Scilit:
- Intermixing of an AlAs-GaAs superlattice by Zn diffusionJournal of Applied Physics, 1982
- Disorder of an AlAs-GaAs superlattice by silicon implantationApplied Physics Letters, 1982
- The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAsApplied Physics Letters, 1981
- Disorder of an AlAs-GaAs superlattice by impurity diffusionApplied Physics Letters, 1981
- X-ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)m multilayersJournal of Applied Physics, 1980
- Ion-implanted silicon profiles in GaAsApplied Physics Letters, 1977
- Interdiffusion between GaAs and AlAsApplied Physics Letters, 1976